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BC817W, BC818W
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)
3

2 1
VSO05561
Type BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W
Maximum Ratings Parameter
Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
Symbol VCEO VCBO VEBO
BC817W 45 50 5 500 1 100 200 250 150
BC818W 25 30 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW C
-65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC817W, BC818W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.16 h FE-grp.25 h FE-grp.40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat VCEsat hFE hFE IEBO ICBO ICBO V(BR)CEO typ. max.
Unit
V 45 25 100 50 100 nA A nA 100 160 250 160 250 350 250 400 630
BC817W BC818W
V(BR)CBO
BC817W BC818W
V(BR)EBO
50 30 5 -
60 100 170 -
-
0.7 1.2 V
1) Pulse test: t 300s, D = 2%
2
Nov-29-2001
BC817W, BC818W
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 fT 170 typ. max.
Unit
MHz pF
3
Nov-29-2001
BC817W, BC818W
Total power dissipation Ptot = f (TS )
Permissible Pulse Load RthJS = f (tp)
300
10 3
K/W
mW
10 2
P tot
200
RthJS
10 1
150
100 10 0 50
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
0 0
20
40
60
80
100
120 C
150
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load
Collector cutoff current ICBO = f (T A) VCBO = 25V
10 5
BC 817/818 EHP00221
Ptotmax / PtotDC = f (tp)
10 3
Ptotmax / PtotDC
-
CBO
nA 10 4
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 3
max
10 2
typ
10 1
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0
0
50
100
C TA
150
tp
4
Nov-29-2001
BC817W, BC818W
DC current gain hFE = f (IC ) VCE = 1V
10 3 h FE 5
BC 817/818 EHP00224
Transition frequency fT = f (IC) VCE = 5V
10 3 fT MHz 5
BC 817/818 EHP00218
100 C 25 C -50 C
10 5
2
10 2
10 1 5
5
10 0 10 -1
10
0
10
1
10
2
mA 10
3
10 1 10 0
10 1
10 2
mA
10 3
C
C
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 3
BC 817/818 EHP00222
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
10 3
EHP00215
C
mA 150 C 25 C -50 C
C
mA 150 C 25 C -50 C
10 2 5
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
0
1.0
2.0
3.0
V
4.0
10 -1
0
0.2
0.4
0.6
V
0.8
V BEsat
V CEsat
5
Nov-29-2001

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